Special technology provideshigh performance power MOSFETs for special applications. These devices have been characterizedfor Total Ionizing Dose and Single Event Effects (SEE) with useful performance.

MOSFETs for commercial and industrial applications

3rd generation
• Accessible in device, die and wafer forms.

Third Generation planar MOSFETs provide the designer the best combination of fast switching, ruggedized device design, low on-resistance and cost effective for high voltage applications.

Any device can be designed within below indicated voltage and current range.

5th generation
• Accessible in device, die and wafer forms.

Fifth Generation MOSFETs provide the designer the superior FBSOA and UIS avalanche capabilities for 55 – 250 V applications. These devices utilize advanced proprietary 4-mask process to achieve low cost per UIS avalanche capability. This benefit, combined with the fast switching speed and ruggedized device design, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Any device can be designed within below indicated voltage and current range.

7th generation
• Accessible in device, die and wafer forms.

Seventh Generation MOSFETs provide the designer the less on-resistance than Gen-5 MOSFETs. These devices have a little worse FBSOA and UIS avalanche capabilities and utilize advanced proprietary 5-mask process to achieve low on-resistance per silicon area.

Any device can be designed within below indicated voltage and current range.

10th generation
• Accessible in device, die and wafer forms.

Tenth Generation MOSFETs technology offers ultra-low on-resistance, gate charge and superior current capability for 20 – 250 V applications. As a result, applications such as switching in 1MHz frequency are possible without excessively heating up the board.

Any device can be designed within below indicated voltage and current range.

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